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| SID9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36 m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications 5.60.2 6.60.2 5.30.2 TO-251 2.30.1 0.50.05 7.00.2 such as DC/DC converters. 7.00.2 1.20.3 0.750.15 Features * Low On-Resistance * Simple Drive Requirement 0.60.1 2.3REF. 0.50.1 G D S Dimensions in millimeters D G Marking Code: 9971 XXXX(Date Code) S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 60 20 25 16 80 39 0.31 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 3.2 110 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SID9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36 m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 60 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=12A o 0.05 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 36 50 30 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 18 6 11 9 24 26 7 1700 160 110 17 nC ID=18A VDS=48V VGS= 4.5V _ _ _ _ VDD=30V ID=18A nS VGS=10V RG=3.3[ RD=1.67[ 2700 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=18A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=25 A, VGS=0V. IS=18A, VGS=0V. dl/dt=100A/us 37 38 Qrr _ Notes: 1.Pulse width limited by safe operating area. 300us, dutycycleO2%. 2.Pulse widthO http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SID9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36 m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v. s. J unction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SID9971 Elektronische Bauelemente 25A, 60V,RDS(ON)36 m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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